(1. 中國工程物理研究院 激光聚變研究中心，綿陽 621900；
2. 等離子體物理重點實驗室，綿陽 621900)
摘 要: 采用真空蒸鍍法分別在K9和Si(100)基片上制備Be薄膜，在相同沉積速率下，K9基片上Be薄膜生長形態(tài)和Si基片上Be薄膜生長形態(tài)存在差異。但是兩者隨沉積速率增加具有相似的演變規(guī)律，即由等軸晶變化至纖維晶，再至粗大等軸晶。XRD和XPS分析結(jié)果表明：不同基片和蒸發(fā)溫度下制備的Be薄膜均主要由HCP結(jié)構(gòu)的α-Be相組成，且表面存在一定氧化；對于非晶K9基片，Be薄膜晶粒取向較單一，(101)始終為顯露晶面；而單晶Si(100)基片上Be晶粒取向多樣，在一定沉積速率下顯露特定晶面；相同沉積時間下K9和Si(100)基體上生長的Be薄膜粗糙度Rq變化趨勢十分相似，兩者隨Be薄膜沉積速率(v)增加先急劇增大后趨于平緩；以細(xì)小等軸晶生長的薄膜表面光潔度較高，而以纖維晶或粗大混晶生長的薄膜表面粗糙度較大。
關(guān)鍵字: Be薄膜；等軸晶；沉積速率；表面粗糙度
（1. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;
2. Science and Technology on Plsama Physics Laboratory, Mianyang 621900, China）
Abstract:Be films grown on K9 and Si(100) substrates were fabricated by an evaporation deposition method. At the same deposition velocity, the growth morphology of Be films grown on the K9 substrate is different from that grown on the Si(100) substrate. Whereas, both of them have the similar evolution rule with the increase of deposition velocity, which changes from an equiaxed grain to a fiber grain, and then to a coarsening equiaxed grain. XRD and XPS analyses indicate that the Be films grown on different substrates at different deposition velocities consist mainly of HCP structure α-Be phase, and all of the Be film surface is oxidized. For the amorphous K9 substrate, the preferential growth orientation of Be film is always exposed to (101) crystal face. While, the grain orientation of the Si substrate is diversiform, a special crystal face can be shown at a certain deposition velocity. For the Be films grown on K9 substrate and Si(100) substrate, their variation trend of roughness Rq is similar at the same deposition time. Both of them increase sharply with the increase of deposition velocity, and then enhance slightly. The Be films with an equiaxed grain is very smooth, while the surface roughness of the fiber grain and coarsening mixed grain is very large.
Key words: Be films; equiaxed grain; deposition velocity; surface roughness
