(西安理工大學 材料科學與工程學院,西安 710048)
摘 要: 利用脈沖微弧氧化電源研究1015鋁合金于不同濃度硅酸鈉水溶液中的起弧過程,借助掃描電子顯微鏡和電化學測試方法分析硅酸鈉濃度對起弧瞬間膜層微觀結(jié)構(gòu)和表面阻值的影響,并根據(jù)電壓變化曲線計算起弧過程的能量消耗。結(jié)果表明:當溶液中硅酸鈉濃度為0時,即使極間電壓升至1 500 V,鋁合金表面仍無微弧放電現(xiàn)象出現(xiàn),并發(fā)生電解腐蝕;隨著硅酸鈉濃度由0.25 g/L增加至10 g/L時,鋁合金表面發(fā)生微弧放電現(xiàn)象所需的電壓由1 217 V降低至351 V,通電至起弧的等待時間由270 s縮短至40 s,起弧瞬間膜層表面放電微孔數(shù)量增多;鋁合金表面形成阻值達105數(shù)量級的高阻抗膜是發(fā)生微弧放電現(xiàn)象的前提,硅酸鈉濃度的增大有利于形成高阻抗膜;鋁合金微弧氧化起弧過程的能量消耗隨著電解液中硅酸鈉濃度的增大而減小,并在硅酸鈉濃度為10 g/L時達到最小值,僅為16 kJ/dm2。
關(guān)鍵字: 鋁合金;微弧氧化;硅酸鈉;起弧過程;能量消耗
(School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China)
Abstract:The arcing process of micro-arc oxidation (MAO) on 1015 alloys aluminum (Al) using pulse power source in aqueous solutions with different Na2SiO3 concentrations was studied. The morphologies and surface resistance of initial films at arcing moment were analyzed and observed using scanning electron microscope (SEM) and electrochemical test, respectively. The effect of Na2SiO3 concentration on energy consumption of arcing process during MAO was calculated based on change curve of voltage. The results indicate that there is no arcing phenomenon but electrolytic etching on Al samples when the Na2SiO3 concentration is 0 and voltage is 1 500 V. With Na2SiO3 solution concentration increasing from 0.25 g/L to 10 g/L, arcing voltage dropping from 1 217 V to 351 V, arcing time reducing from 270 s to 40 s , the quantity of microspores on surface of initial films increases during arcing process of MAO. The high resistance film with resistance up to 105 order of magnitude formed on the surface of Al samples is the premise of arcing phenomenon emerging in MAO process, and higher Na2SiO3 solution concentration is beneficial to forming high resistance film. The energy consumption of arcing process is diminished with Na2SiO3 solution concentration increasing, and minimum value is 16 kJ/dm2 when Na2SiO3 concentration is 10 g/L.
Key words: aluminum alloys; micro-arc oxidation; sodium silicate; arcing process; energy consumption


