(1. 湖南科技大學 化學化工學院 理論有機化學與功能分子教育部重點實驗室，湘潭 411201；
2. 湖南農(nóng)業(yè)大學 資源環(huán)境學院，長沙 410128)
摘 要: BiVO4/WO3異質(zhì)結(jié)薄膜因其優(yōu)異的光電催化活性，已成為光電催化領(lǐng)域的研究熱點。然而，目前制備BiVO4/WO3異質(zhì)結(jié)薄膜通常采用簡單的沉積方法，制備的薄膜存在大量的晶隙和界面缺陷，不利于載流子在界面處的傳輸。本文利用WO3→Bi2WO6→BiVO4原位相轉(zhuǎn)換的原理，成功制備BiVO4/WO3異質(zhì)結(jié)薄膜。通過XRD和TEM等手段表征BiVO4/WO3異質(zhì)結(jié)薄膜的結(jié)構(gòu)，發(fā)現(xiàn)制備的薄膜存在晶隙和界面缺陷少的特點。以制備的薄膜為光陽極，通過光電化學測試，表明原位生長法制備的BiVO4/WO3薄膜的光電化學性能優(yōu)于沉積法制備的BiVO4/WO3薄膜的，原位生長法制備的BiVO4/WO3薄膜的光電流密度達到0.32 mA/cm2 (φ=1 V (vs. Ag/AgCl))。
關(guān)鍵字: CdS/TiO2；光電化學；原位法；光陽極；異質(zhì)結(jié)
（1. Key Laboratory of Theoretical Chemistry and Molecular Simulation, Ministry of Education, School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China;
2. College of Resources and Environment, Hunan Agricultural University, Changsha 410128, China）
Abstract:BiVO4/WO3 heterojunction films have attracted much attention in the field of photoelectrocatalysis due to its excellent photoelectrochemical activity. However, the BiVO4/WO3 films prepared by the simple deposition methods at present exhibited numerous grain boundaries and interface defects, which were unfavorable to the charge transfer in the BiVO4/WO3 interface. In this paper, BiVO4/WO3 films were prepared based on the principle of in-situ transformation (WO3→Bi2WO6→BiVO4). The prepared BiVO4/WO3 films were characterized by XRD and TEM. The results show that the prepared BiVO4/WO3 films have less grain boundaries and interface defects. The photoelectrochemical (PEC) measurements indicate that the BiVO4/WO3 films prepared by the in-situ method have a photocurrent density as high as 0.32 mA/cm2 (φ=1 V (vs. Ag/AgCl)), present a higher PEC activity than those prepared by the deposition method.
Key words: BiVO4/WO3; photoelectrochemical; in situ; photoanode; heterojunction
