(1. 福州大學(xué) 材料科學(xué)與工程學(xué)院，福州 350116；
2. 福州大學(xué) 至誠學(xué)院，福州 350002)
摘 要: ZnSb基熱電材料是中溫區(qū)熱電性能較好的一種材料，為進一步提升其性能，采用磁控濺射(射頻+直流)的方法制備摻雜型ZnSb基熱電薄膜；通過改變?yōu)R射功率控制Ag元素的摻雜量，通過真空退火來實現(xiàn)摻雜元素的均勻化和膜層的結(jié)晶，真空退火溫度選用300 ℃，退火時間為1 h。利用掃描電子顯微鏡(SEM)、X射線衍射儀(XRD)、霍爾效應(yīng)測試儀、薄膜Seebeck系數(shù)測量系統(tǒng)對薄膜特性進行測試；研究Ag摻雜對ZnSb基熱電薄膜膜層結(jié)構(gòu)和熱電性能的影響。結(jié)果表明：隨著Ag摻雜量的增加，薄膜的膜層結(jié)構(gòu)顯著改善，摻雜后薄膜中出現(xiàn)Ag3Sb和Zn4Sb3兩種新相；摻雜后薄膜的熱電性能相比未摻雜薄膜的提升較大，摻雜對薄膜的Seebeck系數(shù)也產(chǎn)生了較大的影響。當(dāng)Ag摻雜量(摩爾分?jǐn)?shù))為2.88%時，樣品獲得最大的功率因子，在573 K溫度下功率因子為1.979 mW/(m？K2)。
關(guān)鍵字: ZnSb基熱電薄膜；磁控濺射；Ag摻雜；膜層結(jié)構(gòu)；熱電性能
（1.School of Materials Science and Engineering, Fuzhou University, Fuzhou 350116, China;
2. Zhicheng College, Fuzhou University, Fuzhou 350002, China）
Abstract:The ZnSb-based thermoelectric material is a kind of material with good thermoelectric properties in middle temperature region. In order to further improve its performance, ZnSb thermoelectric thin films were fabricated by magnetron sputtering (RF+DC) with the Zn-Sb binary composite target. The doping amount of the Ag element was controlled by changing the sputtering power. The annealing temperature was 300 ℃ and the annealing time was 1h; the homogenization of the dopant elements and the crystallization of the samples were carried out by vacuum annealing. The properties of the films were tested by scanning electron microscopy (SEM), X-ray diffractometry (XRD), Hall effect tester and thin film Seebeck coefficient measurement system. The effects of doping on the structure and thermoelectric properties of ZnSb-based thermoelectric thin film were studied. The results show that the film structure of the sample improves significantly with the increase of the amount of Ag doping. After the doping, two new phases, Ag3Sb and Zn4Sb3, appear in the doped film. The thermoelectric properties of the doped films improves compared to those of the films without doping. The dopant has a great influence on the Seebeck coefficient of the sample film. It is concluded that the two new phases, Ag3Sb and Zn4Sb3 form after doping are the key factors that cause the structure and thermoelectric properties of ZnSb-based thermoelectric thin film.
Key words: ZnSb based thermoelectric thin film; magnetron sputtering; Ag doped; film structure; thermoelectric performance
