(1. 內(nèi)蒙古工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，呼和浩特 010051；
2. 北京工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，北京 100124)
摘 要: 采用射頻磁控濺射方法，在石英襯底上制備CuCrO2薄膜。通過(guò)X射線衍射(XRD)、X射線光電子能譜(XPS)、紫外吸收光譜以及電導(dǎo)率的測(cè)定，表征不同襯底溫度沉積薄膜樣品的結(jié)構(gòu)與光電性能。結(jié)果表明：薄膜的結(jié)晶度、可見光透過(guò)率與室溫電導(dǎo)率均隨襯底溫度的升高而增大。襯底溫度升高至923 K后，薄膜由非晶轉(zhuǎn)變?yōu)榫哂秀~鐵礦結(jié)構(gòu)的單相CuCrO2。1023 K沉積的薄膜光電性能最佳，其平均可見光透過(guò)率為50%，室溫電導(dǎo)率為0.33 S/cm。在近室溫區(qū)(150~300 K)，1023 K沉積薄膜導(dǎo)電規(guī)律符合半導(dǎo)體熱激活模式，激活能為0.04 eV。
關(guān)鍵字: CuCrO2薄膜；襯底溫度；結(jié)構(gòu)；光電性能
（1. College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China;
2. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China）
Abstract:CuCrO2 thin films were prepared by radio frequency magnetron sputtering on quartz substrates. The influence of substrate temperature on the structural and optoelectronic properties was investigated. XRD and XPS results show that 923 K and 1023 K deposited films has a delafossite structure without other phases. The electrical conductivity and optical transmittance increase with the increase of substrate temperature. When the substrate temperature is 1023 K, the film has a higher optical transmittance and electrical conductivity. Its transparence in visible light is 50%, and the conductivity at room temperature is 0.33 S/cm. The temperature dependence of electrical conductivity agrees well with the Arrhenius rule in the temperature range of 150-300 K for the 1023 K deposited sample, and the activation energy is 0.04 eV.
Key words: CuCrO2 thin film; substrate temperature; structure; optoelectronic property
