(1. 昆明理工大學(xué) 材料科學(xué)與工程學(xué)院，昆明 650093； 2. 中國(guó)科學(xué)院 寧波材料技術(shù)與工程研究所，中國(guó)科學(xué)院海洋新材料與應(yīng)用技術(shù)重點(diǎn)實(shí)驗(yàn)室，浙江省海洋材料與防護(hù)技術(shù)重點(diǎn)實(shí)驗(yàn)室，寧波 315201)
摘 要: 為探究濺射能量對(duì)WC/a-C:H薄膜結(jié)構(gòu)與性能的影響，并討論WC摻雜對(duì)a-C:H薄膜的影響。通過(guò)非平衡磁控濺射+等離子體增強(qiáng)化學(xué)氣相沉積法(UBMS+PACVD)，以WC靶作為濺射靶，C2H2為反應(yīng)氣體，通過(guò)調(diào)制濺射靶電流，在316不銹鋼基體上制備WC/a-C:H系列薄膜。用場(chǎng)發(fā)射電鏡、透射電鏡、X射線衍射儀、XPS、拉曼光譜等對(duì)薄膜的微觀結(jié)構(gòu)和成分進(jìn)行表征，用劃痕儀、納米硬度儀測(cè)試了薄膜的力學(xué)性能，用多功能摩擦機(jī)對(duì)薄膜的摩擦學(xué)性能進(jìn)行分析。結(jié)果表明：WC主要以β-WC1-x納米晶的形式均勻分布在非晶碳中，隨著濺射靶電流的上升，薄膜中W含量和膜基結(jié)合力呈上升趨勢(shì)，在11A時(shí)上升至21.9%(摩爾分?jǐn)?shù))和18.6 N，而ID/IG比值和硬度逐漸降低至0.55和11 GPa。濺射靶電流為4 A時(shí)，WC/a-C:H薄膜表現(xiàn)出較好的磨損性能，摩擦因數(shù)低至0.15，磨損率為5.38×10-7 mm3/(N？m)。
關(guān)鍵字: 濺射靶電流；WC/a-C:H薄膜；摩擦磨損
（1. School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China; 2. Key Laboratory of Marine Materials and Related Technologies of Chinese Academy of Sciences, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering of Chinese Academy of Sciences, Ningbo 315201, China）
Abstract:In order to investigate the influence of sputtering energy on the structure and properties of WC/a-C:H films and discuss the influence of WC doping on a-C:H films, the series of WC/a-C:H films were prepared on 316 stainless steel substrates by modulating the target current with UBMS+PACVD method. The WC target and C2H2 were used as the sputtering target and the reaction gas, respectively. The microstructure and composition of the films were characterized by field emission electron microscopy, transmission electron microscopy, X-ray diffraction, XPS and Raman spectroscopy. Scratch tester and nano-hardness tester were used to test the mechanical properties of the films. The tribological properties of the film were analyzed by a trace test system. The results show that WC is mainly distributed in the amorphous carbon in the form of β-WC1-x nanocrystals. With the increase of the sputtering target current, the content of W and the binding force of the film increase to 21.9% (mole fraction) and18.6 N, respectively, while the content of ID/IG and hardness decrease at 0.55 and 11 GPa. When the target current is 4 A, the WC/a-C:H films exhibits good wear performance with a friction coefficient as low as 0.15 and a wear rate of 5.38×10-7 mm3/Nm.
Key words: sputtering target current; WC/a-C:H film; friction and wear
