(銀川能源學(xué)院，銀川 750105)
摘 要: 在已導(dǎo)出西門子法三氯氫硅氫還原生成Si-CVD過(guò)程本征動(dòng)力學(xué)模型基礎(chǔ)上，結(jié)合鐘罩還原爐內(nèi)氣相物料的基本流動(dòng)特征和傳遞-反應(yīng)-CVD過(guò)程，采用反應(yīng)工程學(xué)經(jīng)典方法，對(duì)關(guān)鍵組分在圓柱狀硅芯表面CVD層的濃度分布進(jìn)行分析，導(dǎo)出濃度分布微分方程(零階貝塞爾方程)和積分方程(零階貝塞爾函數(shù))，建立了Si的沉積速率模型，即考慮CVD層濃度分布時(shí)的平均沉積厚度模型和沉積質(zhì)量模型，忽略CVD層濃度分布時(shí)的平均沉積厚度簡(jiǎn)化模型和沉積質(zhì)量簡(jiǎn)化模型。
關(guān)鍵字: 反應(yīng)工程；多晶硅；西門子法；三氯氫硅氫還原反應(yīng)；化學(xué)氣相沉積；宏觀動(dòng)力學(xué)模型
（Yinchuan Energy Institute, Yinchuan 750105, China）
Abstract:On the basis of derived intrinsic-kinetics equation producing the Si-CVD of the hydrogen reduction reaction system of trichlorosilane in the bell furnace, the concentration distribution differential equation (the zero order Bessel equation), integral equation (the zero order Bessel function) and deposition rate model of Si were derived by combining the basic material flow characteristics of the gas phase and transferring reaction-CVD process and analyzing the concentration distribution of key component in the cylindrical silicon core CVD layer with the classical theory of reaction engineering, then the deposition rate model of Si-CVD was established. If CVD player concentration distribution is taken into consideration, the average deposition thickness model and the deposition quality model will be included. If not, the two simplified models will be included.
Key words: reaction engineering; polysilicon; Siemens method; reduction reaction of hydrogen trichlorosilane; chemical vapor deposition; macroscopic kinetics model
