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中國有色金屬學報

ZHONGGUO YOUSEJINSHU XUEBAO

第25卷    第4期    總第193期    2015年4月

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文章編號:1004-0609(2015)-04-1005-07
新型Hg3In2Te6芯片引線的鍵合機制
王曉珍,傅 莉,李亞鵬,李林峰

(西北工業(yè)大學 材料學院 凝固技術(shù)國家重點實驗室,西安710072)

摘 要: Hg3In2Te6(MIT)晶體是一種新型的短波紅外光電探測材料,采用熱壓超聲球焊的方法實現(xiàn)MIT紅外探測器與外電路的引線連接,探討MIT復合電極厚度及結(jié)構(gòu)對鍵合率的影響規(guī)律,研究超聲功率和鍵合壓力對第一焊點的外觀形貌和鍵合強度的影響機理。結(jié)果表明:在化學拋光后的MIT晶片表面蒸鍍0.2 μm In、1.0 μm Au制備In/Au復合電極時,鍵合率顯著提高,達到100%;MIT與In/Au復合電極間存在一定的互擴散,促進了鍵合過程的形成;超聲功率與鍵合壓力對焊點形貌和鍵合強度影響最大,當超聲功率為0.45~0.55 W、鍵合壓力為0.5~0.6 N時,焊球與引線的直徑比約為3.5,焊點變形適中,有效鍵合面積較大,90%以上的斷裂發(fā)生在引線位置,表明此種工藝參數(shù)下形成的鍵合強度高、可靠性好。

 

關(guān)鍵字: Hg3In2Te6芯片;熱壓超聲鍵合;Au 電極;In中間層

Bonding mechanism of Hg3In2Te6 new chip wire
WANG Xiao-zhen, FU Li, LI Ya-peng, LI Lin-feng

Northwestern Polytechnical University, School of Materials Science and Engineering,
State Key Laboratory of Solidification Processing, Xi’an 710072, China

Abstract:In order to realize the connection of Hg3In2Te6 (short for MIT), a new type of near-infrared photoelectric material, with outer circuits, the thermo-sonic bonding technology between MIT electrode and down-lead wire was used, and the influence of the electrode thickness and structure on the bonding ratio was studied. Furthermore, the effects of ultrasonic power and bonding pressure on the first joint morphology and bonding strength were also analyzed. The results show that the bonding rate increases (reaching 100%) when 0.2 μm In interlayer was inserted between MIT wafer after chemical polish and the Au electrode with thickness of 1 μm. XPS analysis results show that inter-diffusion between MIT and In/Au composite electrode promotes the bonding process. The welding ball morphology and bonding quality are mainly affected by the ultrasonic power and bonding pressure. When the ultrasonic power and the bonding pressure are about 0.45-0.55 W and 0.5-0.6 N, respectively, the diameter ratio between the ball and wire is about 3.5, and more than 90 % failure position occurs at wire by tensile test, indicating the perfect shape of welding ball and good bonding strength and reliability can be reached.

 

Key words: Hg3In2Te6 chip; thermo-sonic bonding; Au electrode; In interlayer

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國科學技術(shù)協(xié)會 主辦:中國有色金屬學會 承辦:中南大學
湘ICP備09001153號 版權(quán)所有:《中國有色金屬學報》編輯部
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