(中南大學(xué) 材料科學(xué)與工程學(xué)院，長(zhǎng)沙 410083)
摘 要: 采用二步燒結(jié)技術(shù)制備AZO陶瓷靶材，并采用XRD、SEM和EDS對(duì)AZO陶瓷靶材進(jìn)行表征，研究AZO靶材的電阻性能。結(jié)果表明：當(dāng)Al的摻雜量w(Al2O3)為0.5%時(shí)，AZO靶材出現(xiàn)第二相ZnAl2O4；隨Al摻雜濃度增加，ZnAl2O4的衍射峰強(qiáng)度逐漸增強(qiáng)，ZnO晶粒尺寸逐漸減小；隨著第二步燒結(jié)溫度θnd的升高，AZO靶材的晶粒尺寸逐漸增大，相對(duì)密度也隨之增加。靶材的電阻率隨θnd增加而降低，且隨摻雜濃度升高而增加；在第一步燒結(jié)溫度θst=1 400 ℃，升溫速率vst=10 ℃/min，第二步燒結(jié)溫度θnd=1 350 ℃和tnd=16 h燒結(jié)條件下，AZO陶瓷靶材(w(Al2O3)=1.5%)的電阻率僅為2.9×10-2 Ω·cm。
關(guān)鍵字: AZO靶材；二步燒結(jié)；保溫溫度；相對(duì)密度；電阻率
（School of Materials Science and Engineering, Central South University, Changsha 410083, China）
Abstract:AZO(Al-doped ZnO) target materials were prepared by two-step sintering techniques. The AZO ceramic targets were characterized with XRD, SEM and EDS. And the resistance properties of AZO targets were analyzed. The results show that the second phase ZnAl2O4 is detected when Al2O3 doping concentration is 0.5% (mass fraction). ZnAl2O4 diffraction peaks are enhanced and the grain sizes of AZO target are reduced with increasing the doping concentrations. With increasing the second-sintering temperature θnd, the grain sizes of AZO targets and the relative density increase. The electrical resistivity reduces with increasing the second-sintering temperature θnd, while increases with increasing the doping concentration. The electrical resistivity is 2.9×10-2 Ω·cm at the frist-sintering temperature of 1 400 ℃, the heating rate of 10 ℃/min, the second-sintering of 1 350 ℃ and holding time of 16h.
Key words: AZO targets; two steps-sintering; holding temperature; relative density; electrical resistivity
