(1. 北京航空航天大學(xué) 物理科學(xué)與核能工程學(xué)院，北京 100191；
2. 北京工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，北京100124)
摘 要: 利用射頻磁控濺射制備p-CuCr0.91Mg0.09O2/n-Si異質(zhì)結(jié)。XRD結(jié)果表明所制備的純相CuCr0.91Mg0.09O2薄膜具有(012)取向生長特點，正的霍爾系數(shù)確定薄膜的p型特性；電流—電壓特性測試結(jié)果顯示p-CuCr0.91- Mg0.09O2/n-Si異質(zhì)結(jié)具有明顯的整流特性，結(jié)的開啟電壓約為1.0 V，在?5.0~5.0 V的電壓范圍內(nèi)正向電壓與反向方向電壓比約為8.2。基于p-n+單邊突變結(jié)理論，對p-CuCr0.91Mg0.09O2/n-Si異質(zhì)結(jié)的電流曲線進行模擬，模擬結(jié)果表明界面狀態(tài)和串聯(lián)電阻是影響結(jié)整流特性性質(zhì)的重要因素。
關(guān)鍵字: CuCr0.91Mg0.09O2薄膜；整流特性；串聯(lián)電阻；合成；電學(xué)特征
（1. School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;
2. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, ）
Abstract:The p-CuCr0.91Mg0.09O2/n-Si p-n heterogenous junction was synthesized by the radio-frequency magnetron sputtering. The XRD results show that the p-CuCr0.91Mg0.09O2 thin film tends to be oriented on the (012) plane, the positive Hall coefficient confirms p-type nature of the film. The current—voltage characteristic test results show that p-Cu- Cr0.91Mg0.09O2/n-Si heterogenous junction is of obvious rectifying, the ratio of forward current to the reverse current is about 8.2 within the applied voltage range of –5.0 ? 5.0 V and the turn-on voltage is about 1.0 V. The p-CuCr0.91Mg0.09O2/n-Si p-n heterogenous junction can be fitted by the theory of p-n+ one-sided step junction, the simulated results indicate that the effects of the interface state and series resistance are important factors for the rectifying property of the junction.
Key words: CuCr0.91Mg0.09O2 thin film; rectifying characteristic; series resistance; synthesis; electrical properties
