(中南大學 物理科學與技術(shù)學院，長沙 410083)
摘 要: 利用晶硅電池模擬軟件PC1D研究晶硅襯底的厚度、少子壽命及摻雜濃度對電池輸出特性的影響規(guī)律。結(jié)果表明：晶硅襯底的厚度對電池輸出特性的影響與其少子的擴散長度有關(guān)，襯底厚度的減小有利于其開路電壓的提高，存在一最佳厚度值使其轉(zhuǎn)換效率、短路電流及填充因子最高；當少子的擴散長度遠大于襯底厚度時，電池的輸出特性幾乎與襯底厚度無關(guān)；當襯底少子擴散長度與襯底厚度的比值為2.5~3.0時，電池的轉(zhuǎn)換效率最高；晶硅襯底的摻雜濃度在5×1015~1×1017 cm−3之間，即電阻率在0.2~3.0 Ω·cm范圍內(nèi)時，晶硅電池能獲得良好的輸出特性。
關(guān)鍵字: 晶硅電池；襯底參數(shù)；轉(zhuǎn)換效率；輸出特性
（School of Physics Science and Technology, Central South University, Changsha 410083, China）
Abstract:The effects of crystalline silicon substrate properties as thickness, minority carrier lifetime and doping density on the solar cell output properties were simulated by PC1D. The results show that the influence of substrate thickness on the output properties is related with the minority carrier diffusion length, the reduce of the thickness can increase the open circuit voltage, there exists a good thickness value that can get better conversion efficiency, short circuit current density and fill factor; when the minority carrier diffusion length is far larger than the substrate thickness, the properties of solar cell almost have no business with the substrate thickness; when the ratio of substrate minority carrier diffusion length to the thickness is 2.5−3.0, the solar cell has the highest conversion efficiency; when the doping density is between 5×1015−1×1017 cm−3, that is the resistivity is varied between 0.2−3.0 Ω·cm, the solar cell can get better output properties.
Key words: crystalline silicon solar cell; substrate parameters; conversion efficiency; output properties
