(1. 中南大學(xué) 粉末冶金國家重點實驗室，長沙 410083；
2. 湖南金博復(fù)合材料科技有限公司，益陽 413000)
摘 要: 以三氯甲基硅烷(CH3SiCl3, MTS)為先驅(qū)體原料，采用化學(xué)氣相沉積法在C/C復(fù)合材料基體上原位生長碳化硅晶須，研究稀釋氣體流量、催化劑以及沉積溫度對碳化硅晶須生長的影響。結(jié)果表明：有催化劑存在時可以制備具有較高長徑比的SiCw，無催化劑制備的SiC主要以短棒狀或球狀SiC為主；隨著稀釋氣體流量或者沉積溫度的增加，SiCw的產(chǎn)率是先增加、后減少，在1 100 ℃、載氣和稀釋氣體流量均為100 mL/min時，制備的碳化硅晶須的產(chǎn)率最高，晶須質(zhì)量最好。
關(guān)鍵字: 碳化硅晶須；C/C復(fù)合材料；稀釋氣體流量；催化劑；沉積溫度
（1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
2. Hunan Kingbo Carbon-carbon Composites Co., Ltd., Yiyang 413000, China）
Abstract:The silicon carbide whiskers were deposited on C/C composites by chemical vapor deposition (CVD) with methyltrichlorosilane (MTS) as the precursor. The effects of dilute gas flow, catalyst and deposition temperature on the growth of silicon carbide whiskers were investigated. The results show that silicon carbide whiskers (SiCw) with high length-diameter ratio are obtained when there is catalyst, but cosh-like or globular-like silicon carbides are got without catalyst, and with the increase of deposition temperature or the dilute gas flow, the yield of SiCw firstly increases and then decreases, and the highest yield and high quality of silicon carbide whiskers are obtained under the conditions as: deposition temperature of 1 100 ℃ and flow of carry gas and dilute gas both for 100 mL/min.
Key words: SiC whiskers; C/C composites; dilute gas flow; catalyst; deposition temperature
