(中南大學 粉末冶金國家重點實驗室，長沙410083)
摘 要: 采用ZrCl4-CH4-H2-Ar反應體系、固態(tài)輸送ZrCl4粉末低壓化學氣相沉積(CVD)制備ZrC涂層。研究溫度對低壓化學氣相沉積ZrC涂層物相組成、晶體擇優(yōu)生長、涂層表面形貌、斷面結構、涂層生長速度和沉積均勻性等方面的影響。結果表明：不同溫度下沉積的涂層主要由ZrC和C相組成；隨著溫度的升高，ZrC晶粒(200)晶面擇優(yōu)生長增強，顆粒直徑增大，表面致密性增加，沉積速率上升；涂層斷面結構以柱狀晶為主；隨著離進料口距離的增加，涂層的沉積速率逐漸減小；1 500 ℃時，沉積系統(tǒng)的均勻性比1 450 ℃時的差。
關鍵字: ZrC涂層；溫度；低壓；化學氣相沉積
low pressure chemical vapor deposition
（State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China）
Abstract:ZrC film was deposited by chemical vapor deposition with ZrCl4-CH4-Ar system, and ZrCl4 particles was transported in solid. The influences of temperature on the phase composition, preferential growth of the crystals, surface morphology, fracture surface morphology, deposition rate and deposition uniformity of the coatings were studied. The results show that the film prepared at different temperatures is composed of ZrC and carbon. The crystal plane (200) of ZrC film grows up, micro-crystallites grow up, the surface get densely sintered, and the deposition rate increases with increasing the temperature. The columnar crystal is the main body of the fracture surface structure. The deposition rate decreases gradually with increasing the distance between the sample and the feeds entrance. The uniformity of the deposition system at 1 500 ℃ is worse than that at 1 450 ℃.
Key words: ZrC film; temperature; low pressure; chemical vapor deposition
