(中南大學 材料科學與工程學院，長沙 410083)
摘 要: 采用熱絲化學氣相沉積法(HFCVD)，以甲烷和氫氣為反應氣體，在綜合性能良好的Mo-40%Re(摩爾分數(shù))合金基體上沉積金剛石薄膜。采用X射線衍射儀(XRD)、場發(fā)射掃描電子顯微鏡(FESEM)和顯微激光拉曼光譜儀(Raman)分別對金剛石薄膜相組成、表面形貌、晶粒大小和質(zhì)量等進行檢測分析，研究CVD沉積參數(shù)，如基體溫度(θs)、碳源濃度(R，CH4的體積分數(shù))和沉積壓強(p)，對金剛石形核、生長和金剛石成膜的影響。結(jié)果表明：在合適的基體預處理條件下，當θs=750 ℃，R=3%，p=3.5 kPa時，薄膜平均線生長速率高達1 μm/h，得到的金剛石膜完整致密，晶粒大小均勻，純度較高，具有明顯的(111)織構(gòu)。
關(guān)鍵字: 金剛石薄膜；Mo-Re合金；Raman光譜；陰極材料
Mo-Re alloy substrate
（School of Materials Science and Engineering, Central South University, Changsha 410083, China）
Abstract:The diamond films were prepared on Mo-40%Re (mole fraction) alloy substrates by hot filament chemical vapor deposition (HFCVD) in a reactor with a background pressure of 10−5 Pa. The interlayer, diamond morphologies and the purity of the film were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (SEM) and Raman spectroscope (Raman), respectively. Meanwhile, the effects of process parameters, such as substrate temperature, gas composition and reactor pressure, on diamond growth were systematically studied. The results show an optimal growth condition being substrate temperature θs=750 ℃, volume fraction of CH4 R=3%, reaction pressure p=3.5 kPa. Under this condition, a high quality diamond film is obtained with a liner growth rate of 1 μm/h and an obvious (111) texture.
Key words: diamond film; Mo-Re alloy; Raman spectroscope; cathode material
