(1. 東南大學(xué) 材料科學(xué)與工程學(xué)院，南京 211189；
2. 東南大學(xué) 江蘇省先進(jìn)金屬材料高技術(shù)研究重點(diǎn)實(shí)驗(yàn)室，南京 211189)
摘 要: 在Si基底上采用直流磁控濺射法制備CrN薄膜，利用原子力顯微鏡(AFM)、掃描電鏡(SEM)和X射線衍射儀(XRD)分析薄膜表面形貌和物相成分，探討薄膜生長(zhǎng)的動(dòng)力學(xué)過程。結(jié)果表明：只有當(dāng)生長(zhǎng)時(shí)間足夠(1 800 s)時(shí)，才能形成具有CrN相的薄膜。隨著CrN薄膜的生長(zhǎng)，薄膜表面晶粒由三棱錐發(fā)展為三棱錐與胞狀共存狀，薄膜表面粗糙度逐漸增大，動(dòng)力學(xué)生長(zhǎng)指數(shù)β=0.50。
關(guān)鍵字: 直流磁控濺射；表面形貌；粗糙度；生長(zhǎng)指數(shù)
magnetron sputtered CrN films on silicon substrate
（1. School of Material Science and Engineering, Southeast University, Nanjing 211189, China;
2. Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, China）
Abstract:The CrN films were deposited on silicon substrate by direct current (DC) magnetron sputtering. The atomic force microscope (AFM), scanning electron microscope (SEM) and X-ray diffractometer (XRD) were used to analyze film surface morphology and phase structure. The dynamics of film growth processes was investigated. The results show that CrN films are formed only when the deposition time is enough (1 800 s). With the growth of films the surface grains change from pyramidal structure to the coexistence of pyramidal and cellular structure, and the film surface roughness increases gradually. The growth exponent is β=0.50.
Key words: direct current magnetron sputtering; surface morphology; roughness; growth exponent
