(1. 南京工業(yè)大學(xué) 化學(xué)化工學(xué)院，南京 210009；
2. 連云港職業(yè)技術(shù)學(xué)院 醫(yī)藥與化學(xué)工程學(xué)院，連云港 222006)
摘 要: 以Ti(n-OC4H9)4和CH3COOK為原料，采用溶膠−凝膠法在導(dǎo)電玻璃基底上制備K2Ti2O5薄膜，進(jìn)一步以K2Ti2O5薄膜為前軀體，用離子交換法獲得TiO2 納米薄膜電極。利用X 射線衍射(XRD)和掃描電子顯微鏡(SEM)分析薄膜的組成和表面特征；以草酸為有機(jī)污染物代表，通過光電化學(xué)技術(shù)考察薄膜的光電化學(xué)活性。結(jié)果表明：TiO2 納米薄膜具有銳鈦礦晶型，其粒徑隨著K2Ti2O5薄膜制備溫度的降低而減小，約為30~150 nm；TiO2 納米薄膜在0.1 mol/LNa2SO4溶液中具有典型的光電化學(xué)活性以及較高的穩(wěn)定性，比在含少量草酸的溶液中采用溶膠−凝膠法制備的TiO2薄膜具有更強(qiáng)的光激發(fā)和更穩(wěn)定的光電流響應(yīng)性能，TiO2薄膜電極的平帶電位發(fā)生負(fù)移，負(fù)移值為0.140 V(vs SCE)，飽和光電流密度為0.32 mA/cm2。
關(guān)鍵字: TiO2薄膜電極；光電化學(xué)性能；平帶電位；離子交換
TiO2 film electrode with high activity
（1. College of Chemistry and Chemical Engineering, Nanjing University of Technology, Nanjing 210009, China)
2. College of Pharmaceutical and Chemical Engineering, Lianyungang Technical College, Lianyungang 222006, China）
Abstract:The TiO2 nanofilm electrodes were obtained by ion-exchange method using K2Ti2O5 films as precursors which were prepared on tin-doped indium oxide (ITO) glass substrates by sol-gel process using Ti(n-OC4H9)4 and CH3COOK as raw materials. The structural composition and surface characteristics were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM). The photoelectrochemical properties of the TiO2 films were assessed by electrochemical techniques using oxalic acid as organic pollutant. The results show that the crystalline state of the TiO2 nanofilm is anatase, its particle size is about 30−150 nm and decreases with the decrease of preparation temperature of K2Ti2O5 film. The TiO2 film electrode has typical photoelectrochemical activities and high stability in 0.1mol/L Na2SO4 solution. The photoelectrochemical activities of the TiO2 film electrode increase and its flat-band potentials shift negatively in electrolyte solution with small amount of H2C2O4 compared with those in the solution without H2C2O4. The film electrode has stronger photo-response and more stable photocurrent high stability than those of TiO2 film prepared by sol-gel method. The shift value of the flat-band potential of the TiO2 film electrode is 0.140 V(vs SCE)and the saturated photocurrent density is 0.32 mA/cm2.
Key words: TiO2 film electrode; photoelectrochemical properties; flat-band potential; ion-exchange
