(1. 北京有色金屬研究總院 先進電子材料研究所，北京 100088；
2. 北京有色金屬研究總院 粉體國家工程中心，北京 100088)
摘 要: 采用KrF脈沖準分子激光器燒蝕高阻多晶Si靶，分別在液氮冷卻至200 K的高定向石墨(HOPG)和單晶Si(100)襯底上制備分散單晶Si納米顆粒。采用拉曼譜(Raman)和高分辨透射電鏡(HRTEM)分析證實Si納米晶粒的形成。結(jié)果表明：所形成的納米Si顆粒具有均勻分散性，相應(yīng)的光致發(fā)光峰位出現(xiàn)在585 nm，峰值半高寬為70 nm；與相同參數(shù)下常溫襯底的結(jié)果相比，所形成的納米Si顆粒具有較窄的光致發(fā)光譜，并顯示出譜峰藍移現(xiàn)象；Si納米顆粒尺寸的均勻分布是窄發(fā)光帶的主要原因。
關(guān)鍵字: 納米Si顆粒；窄發(fā)光帶；脈沖激光燒蝕；尺寸分布；光致發(fā)光
prepared by laser ablated deposition
（1. Institute of Advanced Electronic Materials, General Research Institute for Nonferrous Metals, Beijing 100088, China;
2. National Engineering Research Center for Powder, General Research Institute for Nonferrous Metals, Beijing 100088, China）
Abstract:The dispersed single crystalline Si nanoparticles were synthesized by KrF excimer laser ablation on HOPG and single crystalline Si(100) substrate cooled by liquid nitrogen to 200 K, respectively. The Raman and HRTEM analysis of the nanoparticles deposited on the HOPG substrate indicate that the Si nanoparticles are crystalline. The results show that the nanoparticles on the Si substrate have a mosaic structure with uniform size. The corresponding photoluminescence (PL) peak wavelength is 589 nm with full width at half maximum of 70 nm, which is blue-shifted and narrower than that obtained at room temperature substrates. The narrow PL spectrum result is attributed to the uniform size of Si nanoparticles.
Key words: Si nanoparticles; narrow photoluminescence peak; pulsed laser ablation; size distribution; photoluminescence (PL)
