文章編號：(1996)02-44-3
氮氣氛下直拉硅中氮含量的紅外光譜測定①
謝書銀 石志儀
(中南工業(yè)大學(xué)應(yīng)用物理與熱能工程系，長沙410083)
摘 要: 提出了利用直拉硅中與氮有關(guān)的特征紅外吸收峰963、996、1081-1及1027cm-1確定直拉硅中氮含量的計算公式并進(jìn)行了多種樣品實測。該法克服了只用963cm-1峰測定直拉硅中氮使結(jié)果偏低的弊病，方法相對偏差為5%~20%。
關(guān)鍵字: 硅 氮 紅外吸收光譜法
DETERMING NITROGEN IN CZOCHRALSKI-SILICON
BY INFRARED ABSORPTION SPECTROMETRY
BY INFRARED ABSORPTION SPECTROMETRY
Xie Shuyin, Shi Zhiyi
（Department of Applied Physics and Heat Engineering,
Central South University of Technology,Changsha 410083）
Abstract:The calculation formula for determination of nitrogen in CZ-Si grown under nitrogen atmosphere by infrared absorption lines related to nitrogen at 963, 996, 1 018 and 1 027cm-1was given and the samples were measured with RSD 5%~20%. This method eliminated the deviation caused by using only 963cm-1in CZ-Si.
Key words: silicon nitrogen infrared absorption spectrometry
