(淄博學(xué)院材料系，淄博 255200)
摘 要: 用電位階躍法，得出產(chǎn)生光滑銅沉積時(shí)硫脲(TU) 的最佳濃度范圍為10 mg/L。由電解制樣，并對樣品進(jìn)行X射線衍射、SEM測試 ，結(jié)果表明，硫脲的存在使沉積表面顆粒細(xì)化，但其濃度大于20 mg/L時(shí)會(huì)造成“突出”生長，從而顯著影響沉積織構(gòu)及沉積生長類型。X射線光電子能譜(XPS)分析表明，銅沉積中的“硫”主要來自硫脲。
關(guān)鍵字: 銅沉積 硫脲 共沉積
（Department of Materials Science and Engineering, Zibo college, Zibo 255200, P. R. China）
Abstract:The smooth copper deposition has been investigated by potentiostatic steps method, and the obtained optimum concentration of thiourea in electrolyte is 10mg/L. The results of XRD a nd SEM for electrolysis sample showed that the thiourea makes the grains fine on deposit surface, and obviously affects the texture and growing structure type of copper deposit when the concentration of thiourea is more than 20mg/L. The results of XPS analysis showed that the “sulphur” in copper deposit is of thiourea origion.
Key words: copper thiourea codeposition
