(哈爾濱工業(yè)大學材料科學與工程學院，哈爾濱 150001)
摘 要: 用ARE(Active Reaction Evaporation)裝置，在N2/Ar混合等離子體弧光放電氣氛下，通過電子束蒸鍍純硼，同時伴以一定能量的正離子轟擊生長的膜表面的方法，在單晶硅(100)基片上成功地合成了立方氮化硼(Cubic Boron Nitride，簡稱c-BN)薄膜，并對基片射頻自偏壓和等離子體弧光放電電流對c-BN 膜形成的影響進行了研究。用富立葉變換紅外(FTIR)透射譜和AES對沉積的膜進行相結(jié)構(gòu)和化學成分分析。FTIR透射譜表明，在波數(shù)約1060cm-1處，存在很強的c-BN的吸收峰。隨基片所加射頻負偏壓及等離子體弧光放電電流的增大，膜中的c-BN含量增大；當射頻偏壓為-200 V，放電電流為15 A時，沉積的膜為單相c-BN膜。AES的成分深度分布表明，c-BN膜中的B，N接近等原子比。
關(guān)鍵字: 立方氮化硼；薄膜成形；活性反應(yīng)蒸發(fā)
（School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 P.R.China）
Abstract:c-BN films were deposited on single crystal Si(100) substrates using active reaction evaporation(ARE) technique， in which pure boron was evaporated by electronic beam，the growing film was simultaneously bombarded by energetic ions in radio frequency plasma discharge of nitrogen and argon. The films were characterized using fourier transform inferred (FTIR) spectra and AES. FTIR spectra showed a strong absorption peak around 1060 cm-1 indicating the formation of c-BN. The amount of c-BN in film increased with increase in radio frequency bias voltage and discharge current . Nearly pure c-BN film formed at radio frequency self-bias of -200V and discharge current of 15A. AES concentration depth profile showed a nearly stoichiometric BN film .
Key words: cubic boron nitride；films forming, active reaction evaporation
