——半導(dǎo)體能帶理論及模型
(1. 廣西大學(xué)資源與環(huán)境學(xué)院，南寧530004；2. 中南工業(yè)大學(xué)礦物工程系，長沙410083)
摘 要: 根據(jù)硫化礦物的半導(dǎo)體性質(zhì)以及硫化礦浮選的電化學(xué)特性，得出了半導(dǎo)體礦物-溶液界面的電子能級(jí)分布能帶模型。提出采用礦物浮選常用參數(shù)，即礦物靜電位和礦物顆粒表面動(dòng)電位來計(jì)算硫化礦物的費(fèi)米能級(jí)和邊緣能級(jí)的簡(jiǎn)便方法。礦物的禁帶寬度、功函數(shù)、藥劑吸附、溶液性質(zhì)以及離子強(qiáng)度等因素能夠改變礦物邊緣能級(jí)的大小。
關(guān)鍵字: 半導(dǎo)體礦物； 能帶理論； 浮選
（1. College of Resource and Environment, Guangxi University, Nanning 530004, P.R.China;
2. Dept. of Mineral Engineering, Central South Univ. of Technology, Changsha 410083, P.R.China）
Abstract:The energy band model of electronic level distribution at solid-solution interface has been described according to semiconductor properties of sulfide minerals and electrochemical characteristics of sulfide flotation. The simple methods are put forward to calculate Fermi level and edge level of sulfide mineral by means of potential of mineral electrode and zeta potential of mineral surface. Band gap width of sulfide mineral, work function, adsorption of reagents, solution property and ion strength of solution can affect edge level of sulfide mineral.
Key words: semiconductor minerals; energy band theory; flotation
