(1. 西安理工大學 電子工程系, 西安 710048；
2. 寧夏星日電子股份有限公司, 石嘴山 753000)
摘 要: 介紹了鈮電容器發(fā)展的起因、 背景、 歷程及現(xiàn)狀。 確定了鈮電容器電介質氧化膜的穩(wěn)定性是影響其性能的首要因素， 并對產(chǎn)生電介質氧化膜的電化學反應進行了對比研究。結果表明： 選擇合適的形成液類型及形成時間等條件， 可以明顯改善五氧化二鈮電介質膜的穩(wěn)定性， 從而使鈮電容器的性能得到有效改善和控制， 并進一步接近鉭電容器性能，具有工業(yè)化應用潛力。
關鍵字: 鈮電容器； 電介質； 容量； 漏電流
dielectric stability
GAO Yong1, DONG Ning-li2
（1. Department of Electronic Engineering,
Xi′an University of Technology, Xi′an 710048, China;
2. Ningxia Xingri Electronics Co. Ltd.,
Shizuishan 753000, China）
Abstract:The application of metal niobium for making niobium capacitor in electronic industry was introduced, and the original, background, history and current state for development of niobium capacitor were described. The stability of dielectric film has influence on performance of niobium capacitor. A better result was finally obtained through comparative experiments on the dielectric film formed electrochemically. The result shows that the stability of niobium pentoxide dielectric film is greatly improved by optimizing process conditions such as type of formation solution and formation time. As a result, the performance of niobium capacitor is effectively controlled and improved, thereby solid niobium capacitor equivalent to tantalum capacitor at performance can be manufactured, and has potential for industrialization application.
Key words: niobium capacitor; dielectric film; capacitance; leakage current
