(1. 福州大學 材料研究所， 福州 350002;
2. 美國密蘇里羅拉大學 材料研究中心， 羅拉 65409)
摘 要: 采用乙醛酸代替有害的化學藥品（如甲醛）作為還原劑的化學鍍技術， 在工業(yè)純鋁片、 工業(yè)純鈦片、 以TiN作為擴散防護層的硅片和以TiSiN作為擴散防護層的硅片等難鍍材料實現(xiàn)了化學鍍銅。被覆銅鍍層的表面形貌和晶粒結構的分析結果表明： 不同基材對銅鍍層的組織結構影響很大， 尤其在以TiN作為擴散防護層的硅片和以TiSiN作為擴散防護層的硅片上，獲得了由平均尺寸為50nm的顆粒所構成的較精細鍍層，為半導體器件采用銅金屬化工藝提供了新的方法。
關鍵字: 銅； 乙醛酸； 基材
by using glyoxylic acid as reducing agent
SUN Jing-hua2, LEE Ye-kun2, YOU Shao-xin2， LI Jing-ye2
（1. Fuzhou University, Fuzhou 350002, China;
2. University of Missouri-Rolla, Rolla, Missouri, MO65401, American）
Abstract:Using glyoxylic acid to replace the harmful chemical substance such as formaldehyde as a reducing agent, an electroless copper plating on difficulty deposited substrates was fulfilled, which including Al，Ti and wafers having TiN and TiSiN as the barrier layers．The surface morphologies and grain structures of copper deposits prepared were analyzed. The results show that different substrates would influence the morphology of coating and inner structures greatly. Among the various substrates, the emphasis is put upon the deposits on the TiN and TiSiN barrier layers on silicon substrate. The fine structured coatings are composed of grains with their average diameters around 50 nanometer，which would provide a new method for copper interconnections in semiconductor devices.
Key words: copper; glyoxylic acid; substrate
