(1. 重慶大學(xué) 材料科學(xué)與工程學(xué)院冶金系，
重慶 400044;
2. 攀枝花鋼鐵研究院綜合室， 攀枝花 617000)
摘 要: 以工業(yè)V2O5為原料，采用熱分解法和還原法制備工業(yè)VO2薄膜。研究了制備工藝參數(shù)對(duì)電阻突變的影響及其在自然放置條件下的穩(wěn)定性。結(jié)果表明：1）VO2薄膜的電阻突變達(dá)到了2.0～3.4個(gè)數(shù)量級(jí)，突變溫度約為35℃，比純VO2薄膜突變溫度約低33℃；2）石英玻璃上的VO2薄膜的電阻突變數(shù)量級(jí)比普通玻璃上的大；3）H2還原法制備的VO2薄膜電阻突變數(shù)量級(jí)比N2熱分解法制備的大；4）在自然放置條件下短時(shí)間內(nèi) VO2薄膜可承受連續(xù)、反復(fù)多次的電阻突變，其突變數(shù)量級(jí)降低不多，突變溫度滯后幾乎沒(méi)有變化；5）同等條件下石英玻璃上的VO2薄膜的電阻突變數(shù)量級(jí)降低較小、穩(wěn)定性較好。
關(guān)鍵字: V2O5 ；VO2；薄膜；電阻；M-S相變
CHEN Hou-sheng2, HU Zai-yong1
（1. College of Materials Science and Engineering,
Chongqing University, Chongqing 400044， China；
2. Panzhihua Iron & Steel Research Institute，
Panzhihua 617000， China）
Abstract:Industrial VO2 crystal thin films are produced through thermal decomposition method and reduction method with industrial V2O5 as raw material. The suddenly changing properties of VO2 thin films resistance were tested. The effects of preparation technological parameters on suddenly changing of VO2 thin films resistance and its stability at natural condition were studied. The results show that： 1)The suddenly changing of VO2 thin films resistance reaches 2.0～3.4 order of magnitude, and the temperature of its suddenly changing is about 35℃, which is lower 33℃ than that of pure VO2 thin film； 2)the order of magnitude of suddenly changing of the VO2 thin films resistance on quartz glass are larger than those on ordinary glass; 3)the order of magnitude of suddenly changing of the VO2 thin films resistance by H2 reduction method are larger than those by N2 thermal decomposition method; 4)VO2 thin films can undergo continuous and repeat the M-S phase transition at natural conditions and in short time, decreasing of order of magnitude of suddenly changing is less, and temperature hysteresis of suddenly changing do not nearly vary； 5)under the same conditions the decreasing of order of magnitude of suddenly changing of VO2 thin films resistance on quartz glass is less, and its stability is better.
Key words: vanadium dioxide； vanadium pentoxide； thin film； resistance； M-S phase transition
