(上海交通大學(xué) 材料科學(xué)與工程學(xué)院 教育部高溫材料及
高溫測試重點(diǎn)實(shí)驗(yàn)室，上海 200030)
摘 要: 研究了Cr-Si-Al和Cr-Si-Al-N兩種薄膜的微觀結(jié)構(gòu)及電性能。結(jié)果表明：濺射態(tài)非晶Cr-Si-Al和Cr-Si-Al-N薄膜在加熱到700℃的過程中，將析出兩種晶化相，即Cr(Al，Si)2和Si微晶相；氮元素加至Cr-Si-Al非晶膜中，將阻礙其中晶化相的形核與長大；與Cr-Si-Al薄膜相比，Cr-Si-Al-N薄膜欲獲得較小電阻溫度系數(shù)(TCR)需要更高的退火溫度；Cr-Si-Al-N電阻膜具有更高的電學(xué)穩(wěn)定性。
關(guān)鍵字: 電阻薄膜；晶化；氮；電學(xué)穩(wěn)定性
behavior and electrical properties of
Cr-Si-Al resistive films
（Key Laboratory of Education Ministry for High Temperature Materials and
Tests，School of Materials Science and Engineering，Shanghai Jiaotong
University，Shanghai 200030，China）
Abstract:The microstructure and electrical properties of annealed Cr-Si-Al and Cr-Si-Al-N films were investigated. The results show that，when sputtered amorphous Cr-Si-Al and Cr-Si-Al-N films are heated up to temperature of 700℃，they all crystallize into two phases: the nanocrystalline Cr(Al，Si)2 and Si phase. The addition of N into amorphous Cr-Si-Al films inhibits the nucleation and growth of the crystallization phase，resulting in the higher annealing temperatures for Cr-Si-Al-N films in comparison with Cr-Si-Al films to obtain a small temperature coefficient of resistance (TCR). As a result，the Cr-Si-Al-N resistive films have higher electrical stability.
Key words: resistive films; crystallization; nitrogen; electrical stability
