(1.太原理工大學(xué) 表面工程研究所， 太原 030024；
2.西安交通大學(xué) 材料科學(xué)與工程學(xué)院， 西安 700049；
3.上海交通大學(xué) 材料科學(xué)與工程學(xué)院， 上海 200030)
摘 要: 介紹了一種應(yīng)用電子浴輔助陰極電弧源法合成AlN薄膜的新方法，研究了N2流量、陰極偏壓、工作氣壓等工藝參數(shù)對(duì)合成AlN薄膜質(zhì)量的影響規(guī)律。結(jié)果表明，隨N2流量的增加，AlN薄膜的質(zhì)量得以提高，當(dāng)N2流量達(dá)到30 mL·min-１時(shí)，可合成較純凈的AlN薄膜；陰極偏壓主要影響合成薄膜的結(jié)晶狀況；此外，基體材料本身及其表面狀況也對(duì)合成薄膜的質(zhì)量有一定影響。
關(guān)鍵字: 陰極電弧源法； AlN薄膜； 電子浴
of aluminium nitride thin film with cathode
arc source assisted by electrons bath
（1. Research Institute of Surface Engineering,
Taiyuan University of Technology, Taiyuan 030024， P.R.China;
2. School of Materials Science and Engineering,
Xi′an Jiaotong University,Xi′an 710049, P.R.China;
3. School of Materials Science and Engineering,
Shanghai Jiaotong University, Shanghai 200030, P.R.China）
Abstract:A new synthesizing aluminum nitride thin film method, which uses activated active ion plating with cathode arc source assisted by electrons bath, was introduced. The effect law of process parameters (including nitrogen flow rate, substrate bias potential, gas pressure etc.) on the quality of synthesized aluminum nitride was investigated. The results show that the quality of AlN thin films are improved with the increase of N2 flow rate. When N2 flow rate reaches to 30 mL·min-１，comparatively pure AlN thin film is synthesized. The cathode bias potential mainly affects the crystallinity of the films. In addition， substrate material and its surface state also have some effects on the films.
Key words: cathode arc source；aluminum nitride thin film; electrons bath
