(1. 西北工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，西安 710072；
2. 西安交通大學(xué) 材料 科學(xué)與工程學(xué)院，西安 710049)
摘 要: 研究了反應(yīng)燒結(jié)碳化硅材料(RB-SiC)900℃的氧化過程以及制備參數(shù)和摻雜元素對氧化過程的影響。結(jié)果表明：在900℃氧化時，除石油焦加入量較高的反應(yīng)燒結(jié)碳化硅材料在氧化初期表現(xiàn)為質(zhì)量損失外，其余均表現(xiàn)為質(zhì)量增加，并且質(zhì)量增加量與氧化時間遵循拋物線規(guī)律。摻雜Al和Ni元素可以提高碳化硅材料的高溫抗氧化能力。氧化過程對反應(yīng)燒結(jié)碳化硅材料的導(dǎo)電性能影響不大。對碳化硅材料的氧化機制及影響因素進(jìn)行了分析和討論。
關(guān)鍵字: 反應(yīng)燒結(jié)碳化硅；高溫氧化；摻雜
reaction-bonded silicon carbide
（1. School of Materials Science and Engineering，
North-western Polytechnical University，Xi′an 710072, China;
2. School of Materials Science and Engineering，
Xi′an Jiaotong University，Xi′an 710049, China）
Abstract:The oxidation behavior of reaction-bonded silicon carbide (RB-SiC)，and the effects of process parameters on the oxidation，were studied. The results show that the mass of RB-SiC samples can be increased when they are oxidized at 900℃，except that the mass of sample with large addition content of petrol coke can be decreased in initial stage of oxidation. The relationship between the mass-gain of RB-SiC and holding time follows the parabolic rule. The oxidation resistance of RB-SiC at 900℃ can be increased by the addition of Ni and Al elements. But the oxidation of RB-SiC does't affect largely on its electric conduction. The oxidation mechanism of RB-SiC and the affecting factor on it are analyzed and discussed.
Key words: reaction-bonded SiC；high temperature oxidation；doping
