(湖南大學(xué) 材料科學(xué)與工程學(xué)院， 長沙 410082)
摘 要: 采用激光燒蝕法制備了磷摻雜硅納米線和硼摻雜硅納米鏈， 并運用透射電子顯微鏡（TEM）、近邊X射線吸收精細(xì)結(jié)構(gòu)光譜（NEXAFS）、X射線光電子能譜（XPS）及場發(fā)射（FE）測量等對其進(jìn)行了研究。 結(jié)果表明：硅納米線包覆在二氧化硅層中及其核心由磷摻雜的晶體硅構(gòu)成， 磷不僅存在于硅納米線的核心內(nèi)， 也存在于二氧化硅與硅核心的相界面上； 硼摻雜硅納米鏈的外部直徑約為15 nm， 由直徑11 nm的晶核和2 nm的無定形氧化物外層構(gòu)成的晶格所組成，其粒間距為4 nm，硅納米粒子鏈的閥值場強(qiáng)為6 V/μm， 優(yōu)于未摻雜的硅納米線的閥值場強(qiáng)（9V/μm）。 X射線光吸收譜可以補(bǔ)充提供常規(guī)電流-電壓測量得不到的信息， 并提示摻雜分布的細(xì)節(jié)。
關(guān)鍵字: 硅納米線; 硅納米鏈; 摻雜; 光電特性
（College of Materials Science and Engineering, Hunan University, Changsha 410082, China）
Abstract:Phosphorus-doped silicon nanowire(P-SiNW) and boron-doped silicon nanoparticle chain(B-SiNC) synthesized by using laser ablation method were investigated by transmission electron microscopy(TEM), high resolution transmission electron microscopy(HRTEM), near edge X-ray absorption fine structure spectroscopy(NEXAFS), X-ray photoelectron spectroscopy(XPS) and field emission measurement etc. The results show that the nanowires are encapsulated within a silica layer and that the cores of the nanowires are crystalline silicon doped with phosphorus. Phosphorus is found to be inside the core of the Si wire and at the interface of silica outerlayer and silicon core. TEM and HRTEM show that the outer diameters of the nanoparticles are around 15 nm and the nanoparticles have perfect lattices with 11 nm crystalline core and 2 nm amorphous silica outerlayer while the distance of the interparticles is 4 nm. Field-emission measurement show that the turn-on field of B-SiNC is 6 V/μm, which is much lower than that of undoped Si nanowires(9 V/μm). And X-ray absorbtion spectroscopy can also provide complementary information to the common current-voltage measurement and detail information of the doped distribution, simultaneously.
Key words: silicon nanowire; silicon nanoparticle chain; doping; optoelectronic characteristic
