(哈爾濱工業(yè)大學 復合材料與結構研究所， 哈爾濱 150001)
摘 要: 采用絡合沉淀法制備了納米四方相SnO2顆粒， 并對制備機理和顆粒結構和性質(zhì)進行了實驗研究。 結果表明， 反應過程中由于加入和釋放出的有機物在納米顆粒形核時起到了空間位阻的作用， 避免了顆粒的迅速長大和團聚， 而且在納米SnO2形核時造成了缺氧環(huán)境， 導致沉淀產(chǎn)物配位數(shù)不足， 表面界面原子在顆粒原子總數(shù)中比例較高。 XRD和TEM結果顯示， 納米SnO2顆粒分布均勻。 拉曼散射研究結果表明， 10 nm的顆粒只有表面界面原子的貢獻， 未發(fā)現(xiàn)有體相原子的貢獻。
關鍵字: 納米材料; SnO2; 表面界面效應
LI Chang-qing, WANG Gui-gen
（ Center for Composite Materials, Harbin Institute of Technology,
Harbin 150001, China）
Abstract: Preparing mechanism and structural properties of nanometer tetragonal SnO2 by chelating-precipitation method were reported. The organics have a space disturbing effect during nanosized particle nucleation. This effect can prevent particles from enlarging and aggregation and make an absent oxygen circumstance during nanosized SnO2 nucleation. Consequently, the coordination number in precipitate is less and the surface-interface atoms are more than those in normal precipitated processing. The XRD and TEM characterization results indicate that the particle distribution of nanosized SnO2 is uniform. The Raman measuring results suggest that phonons contribution of surface-interface atoms can be found in 10 nm particles only.
Key words: nanometer material; tin oxide; surface-interface effect
