(西安交通大學(xué) 金屬材料強(qiáng)度國(guó)家重點(diǎn)實(shí)驗(yàn)室， 西安 710049)
摘 要: 用反應(yīng)磁控濺射法在不同偏壓下沉積了Zr-Si-N擴(kuò)散阻擋層。 結(jié)果表明： Zr-Si-N膜的成分、 電阻率和結(jié)構(gòu)均隨偏壓的改變而不同；隨著濺射偏壓的增加， Zr-Si-N膜的表面粗糙度值增大； Zr/Si比值也隨著偏壓的增加而增大；電阻率隨偏壓的增加顯著降低； Zr-Si-N膜的結(jié)構(gòu)為類似Si3N4的氮硅化物非晶相與ZrN組成的復(fù)合結(jié)構(gòu)， 隨著偏壓的升高ZrN由非晶轉(zhuǎn)變?yōu)榧{米晶， 而且ZrN晶體相增加。
關(guān)鍵字: Zr-Si-N； 擴(kuò)散阻擋層; 偏壓; 結(jié)構(gòu)
diffusion barrier
（State Key Laboratory for Mechanical Behavior of Materials,
Xi′an Jiaotong University, Xi′an 710049, China）
Abstract: The Zr-Si-N diffusion barrier films were deposited by reactive magnetron sputtering with different negative biases. The composition, resistivity and structure of the Zr-Si-N films depend strongly on the substrates bias. With increasing the bias, the surface roughness and the ratio of Zr to Si of Zr-Si-N increase, but the resistivity of the films decreases. The microstructure of Zr-Si-N films is a composite structure consisting of ZrN and amorphous Si3N4-like compound of Si-N. With increasing the bias, the ZrN phase changes from amorphous to nanocrystalline, and the amount of ZrN crystalline phase in the films increases.
Key words: Zr-Si-N; diffusion barrier; bias; microstructure
