沉積條件對薄膜織構(gòu)的影響
閻鵬勛2，劉維民1， 薛群基1
( 1. 中國科學(xué)院 蘭州化學(xué)物理研究所 固體潤滑國家重點(diǎn)實(shí)驗(yàn)室， 蘭州 730000；
2. 蘭州大學(xué) 等離子體與金屬材料研究所, 蘭州 730000)
摘 要: 在室溫條件下， 利用自行設(shè)計(jì)的平面“S”形磁過濾等離子體設(shè)備， 在（111）面單晶硅上制備TiN薄膜，通過改變基底偏壓和反應(yīng)氣體成分， 即通過改變氮?dú)夂蜌鍤獾臍怏w流量來改變沉積離子的能量和密度， 從離子轟擊的角度研究了沉積條件對TiN薄膜織構(gòu)的影響。 對薄膜的表面形貌進(jìn)行觀察，用（θ~2θ）和1.5°掠入射2種X射線衍射方法對薄膜晶體結(jié)構(gòu)和晶面取向進(jìn)行了分析，對薄膜進(jìn)行了電子衍射研究。 結(jié)果顯示磁過濾等離子制備的TiN薄膜表面平整光滑，顆粒尺寸為20~70nm， 且基底偏壓和氬氣流量的增大促使薄膜發(fā)生（111）面的擇優(yōu)取向， 且（111）晶面與膜表面平行， 而在高氬氣流量的情況下，（200）和（220）面在薄膜平面也發(fā)生了定向排列。
關(guān)鍵字: 氮化鈦； 磁過濾等離子體； 薄膜織構(gòu)
LI Xin2,YAN Peng-xun2, LIU Wei-min1, XUE Qun-ji1
（ 1. State Key Laboratory of Solid Lubrication, Institute of Chemical Physics,
Chinese Academy of Science, Lanzhou 730000, China;
2. Institute for Plasma and Metal Materials, Lanzhou University, Lanzhou 730000, China）
Abstract: TiN thin films were deposited on (111) silicon substrate at room temperature by using self-made filtered cathodic arc plasma system. The ion energy and density bombarding onto the films surfaces were changed by adjusting the negative substrate bias and N2 and Ar gas flux. The effect of deposition parameters on the texture of TiN films was studied on the view of ion bombardment. The atomic force microscope and X-ray diffraction were employed to characterize the microstructure and morphology of the TiN thin films. The results show that the TiN thin films deposited by filtered cathodic arc plasma are very smooth, and the particle sizes of the TiN is 20-70nm. And with increasing negative voltage and Ar flux, the preferred crystalline orientation is on the denser (111) orientation. Comparing the two modes of(θ-2θ) and grazing angle incidence(1.5°), it finds that the orientate plane (111) parallels the film surface under high Ar flux, and the (220) and (200) orientate in the plane of film.
Key words: TiN； filtered cathodic arc plasma； film texture
