(上海交通大學(xué) 材料科學(xué)與工程學(xué)院
教育部高溫材料及測(cè)試重點(diǎn)實(shí)驗(yàn)室， 上海 200030)
摘 要: 采用磁控濺射方法在Si(100)基底上制備了Cr-Si-Ni電阻薄膜， 研究了不同溫度退火時(shí)薄膜微觀結(jié)構(gòu)的轉(zhuǎn)變過程以及對(duì)電阻率的影響。 結(jié)果表明： 薄膜在濺射態(tài)和低于300 ℃熱處理時(shí)為非晶態(tài)； 退火溫度高于300 ℃以后， 薄膜中析出CrSi2晶化相； 當(dāng)退火溫度達(dá)到600 ℃時(shí)， 薄膜中還有少量多晶Si相析出， 同時(shí)在薄膜與基底界面處還發(fā)生了原子的相互擴(kuò)散； CrSi2晶化相成“島”狀結(jié)構(gòu)， 彌散分布在非晶絕緣基底上； 薄膜室溫電阻率隨著退火溫度的上升， 呈先上升、 后下降趨勢(shì)； 薄膜電阻率隨退火溫度的變化行為與薄膜微觀結(jié)構(gòu)的變化以及界面擴(kuò)散有關(guān)。
關(guān)鍵字: 電阻薄膜； Si基底； 微觀結(jié)構(gòu)； 界面擴(kuò)散； 電阻率
（ Key Laboratory for High Temperature Materials and Tests of Ministry of Education, School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China）
Abstract: Cr-Si-Ni resistive films were prepared on n-type Si (100) substrates by magnetron sputtering. The microstructure evolution and electrical resistivity of the films as a function of annealing temperatures were investigated. The results reveal that the microstructure of the films at as-deposited state and annealed at temperature lower than 300 ℃ are amorphous state. With the annealing temperature increases to higher than 300 ℃, the nanocrystalline CrSi2 begins to appear. A few polycrystalline Si phase is separated at the films, and an atomic interdiffusion at the interface between the films and Si substrates can be observed, when the annealing temperature reaches 600 ℃. Cr-Si-Ni films consist of the nanocrystalline phase as an island dispersed in amorphous insulating matrix. With the annealing temperatures increasing, the room temperature resistivity of the films rises at the beginning, then goes down. The annealing behavior of the resistivity is correlated with the microstructure and interfacial diffusion of the films.
Key words: resistive film; Si substrates; microstructure; interfacial diffusion; electrical resistivity
