(國(guó)防科技大學(xué) 航天與材料工程學(xué)院, 長(zhǎng)沙 410073)
摘 要: 采用模壓成形制備SiC預(yù)制件和真空壓力浸滲相結(jié)合的技術(shù)， 成功制備出AlSiC電子封裝基片。 研究磷酸鋁含量和成形壓力對(duì)SiC預(yù)制件抗彎強(qiáng)度和孔隙率的影響規(guī)律， 并對(duì)所制備的AlSiC電子封裝基片的性能進(jìn)行評(píng)價(jià)。 結(jié)果表明， 在磷酸鋁含量為0.8%， 成形壓力為200 MPa時(shí)， 經(jīng)600 ℃恒溫2 h處理的SiC預(yù)制件抗彎強(qiáng)度為8.46 MPa， 孔隙率為37%。 當(dāng)溫度為100~500 ℃時(shí)， AlSiC電子封裝基片的熱膨脹系數(shù)介于6.88×10-6和8.14×10-6 ℃-1之間， 熱導(dǎo)率為170 W/(m·K)， 抗彎強(qiáng)度為398 MPa， 氣密性小于1×10-8 Pa·m3/s。 用鈀鹽活化進(jìn)行化學(xué)鍍鎳， 得到光亮、 完整的鍍層。 鍍層于450 ℃恒溫120 s后， 鍍層不變色， 未見(jiàn)起皮和鼓泡。
關(guān)鍵字: AlSiC電子封裝基片； 氣密性； 真空壓力浸滲； 化學(xué)鍍鎳
YANG Sheng-liang, ZHAO Xun
（College of Astronautics and Material Engineering,
National University of Defence Technology, Changsha 410073, China）
Abstract: The aluminum silicon carbide electronic packaging baseplates were produced successfully by combination of compression molding for SiC preform and vacuum pressure infiltration. The effects of amount of aluminum phosphate and molding pressure on porosity and strength of SiC preform were investigated, and the properties of AlSiC electronic packaging baseplates were also evaluated. The results show that the bending strength and porosity of SiC perform dried at 600 ℃ for 2 h are 8.46 MPa and 37%, respectively, when the content of aluminum phosphate is 0.8% and the molding pressure is 200 MPa. The coefficient of thermal expansion of AlSiC electronic packaging baseplates ranges from 6.88×10-6 to 8.14×10-6 ℃-1 at the temperatures of 100-500 ℃, the thermal conductivity is 170 W/(m·K), the bending strength is 398 MPa and the hermeticity is less than 1×10-8 Pa·m3/s. The electroless nickel was processed by utilizing palladium chloride as activator. The plating layer with bright, smooth and continuous surface has good adhesion when it is exposed at 450 ℃ for 120 s.
Key words: aluminum silicon carbide electronic packaging baseplate; hermeticity; vacuum pressure infiltration; electroless nickel plating
