((1. 上海交通大學(xué) 材料科學(xué)與工程學(xué)院 教育部高溫材料及測(cè)試重點(diǎn)實(shí)驗(yàn)室，上海 200240；2. 東華大學(xué) 理學(xué)院，上海 200051；3. 中國(guó)科學(xué)院 上海技術(shù)物理研究所，上海 200083))
摘 要: 利用磁控濺射在室溫條件下沉積ITO薄膜和ITO׃Zr薄膜，對(duì)比研究在空氣中退火處理對(duì)ITO和ITO׃Zr薄膜性能的影響。結(jié)果表明，Zr的摻雜促進(jìn)了(400)晶面的取向，隨著退火溫度的升高，薄膜表面顆粒增大，表面粗糙度有所降低。室溫下Zr的摻雜顯著改善了薄膜的光電性能，隨著退火溫度的升高，ITO和ITO׃Zr薄膜的方阻都表現(xiàn)為先降后升的趨勢(shì)，ITO׃Zr薄膜在較低的退火溫度下可見光透過(guò)率就可達(dá)到80%以上，直接躍遷模型確定的光學(xué)禁帶寬度Eg呈現(xiàn)了先升后降的變化。ITO׃Zr薄膜比ITO薄膜顯示了更高的效益指數(shù)，揭示了ITO׃Zr薄膜具有更好的光電性能。
關(guān)鍵字: ITO薄膜；磁控濺射；退火處理；光電性能
（(1. Key Laboratory for High Temperature Materials and Tests of Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;2. College of Science, Donghua University, Shanghai 200051, China;3. Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China)）
Abstract: ITO and ITO׃Zr thin films were deposited at room temperature by magnetron sputtering. Properties of ITO and ITO׃Zr thin films by air-annealing treatment were contrastively studied. The results show that Zr-doping promotes the orientation of (400) plane. With the increase of annealing temperature, the grain size increases and the surface roughness decreases. Zr-doping remarkably improves the optical-electronic characteristics of the films deposited at room temperature. With the increase of annealing temperature, the sheet resistances of ITO and ITO׃Zr thin films show the trend that first drops and then rises. ITO׃Zr thin films have high optical transmittance of above 80% at lower annealing temperature. The direct transition model was established and band gap energy Eg was obtained, which show the change that Eg increases and follows by a sudden drop. ITO׃Zr thin films reveal higher figure of merit than ITO thin films, which reveals that ITO׃Zr thin films have better optical-electrical properties.
Key words: ITO thin films; magnetron sputtering; annealing treatment; optical-electrical properties
