(中南大學(xué) 材料科學(xué)與工程學(xué)院，長沙 410083)
摘 要: 利用循環(huán)伏安方法和恒電位階躍技術(shù)研究Ni-SiC復(fù)合鍍層電沉積行為。結(jié)果表明：Ni-SiC復(fù)合鍍層和純Ni鍍層的形核/生長過程符合Scharifker-Hill三維成核模型；在低過電位下，Ni-SiC復(fù)合鍍層形核/生長過程按三維連續(xù)成核機(jī)制；高過電位下，形核/生長過程遵循瞬時成核機(jī)制，與純Ni鍍層的形核/生長過程具有一致性；無論Ni-SiC復(fù)合鍍層還是純Ni鍍層，形核弛豫時間tm隨負(fù)電位的增大呈現(xiàn)有規(guī)律遞減趨勢，相應(yīng)的Im值基本相近；SiC粉體的引入導(dǎo)致Ni形核的過電位正移和tm的顯著減小。
關(guān)鍵字: 電結(jié)晶；形核；循環(huán)伏安；恒電位階躍
（School of Materials Science and Engineering, Central South University, Changsha 410083, China）
Abstract:The electroplating behavior of fabricating Ni-SiC composite film (NS) was investigated using chronoamperometry method in conjunction with the cyclic voltammetry method. The results show that, in the case of lower electroplating negative voltage, the co-deposition of Ni-SiC film follows a 3-D progressive nucleation/growth mechanism. While in the case of higher electroplating negative voltage, it follows a 3-D instantaneous nucleation/growth mechanism. However, either Ni-SiC co-deposition coatings or pure Ni coatings, the nucleation relaxation time tm decreases regularly with the increase of the negative potential, while the corresponding current Im are almost in the same quantity. Obviously, because of addition of SiC powder, the nucleation potential of Ni turns to positive direction, and the nucleation relaxation time tm decreases clearly.
Key words: electrocrystallization; nucleation; cyclic voltammetry; potentiostatic transients
