中國有色金屬學報(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 19 No. 6 December 2009 |
（1. School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China;
2. Department of Physics and Maths, Guilin University of Technology, Guilin 541004, China;
3. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology,
Guilin 541004, China）
Abstract:Nitrogen-doped fluorinated diamond-like carbon (FN-DLC) films were prepared on single crystal silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) under different deposited conditions with CF4, CH4 and nitrogen as source gases. The influence of nitrogen content on the structure and electrical properties of the films was studied. The films were investigated in terms of surface morphology, microstructure, chemical composition and electrical properties. Atomic force microscopy (AFM) results revealed that the surface morphology of the films became smooth due to doping nitrogen. Fourier transform infrared absorption spectrometry (FTIR) results showed that amouts of C=N and C≡N bonds increased gradually with increasing nitrogen partial pressure r (r=p(N2)/p(N2+CF4+CH4)). Gaussian fit results of C 1s and N 1s in X-ray photoelectron spectra (XPS) showed that the incorporation of nitrogen presented mainly in the forms of β-C3N4 and a-CNx (x=1, 2, 3) in the films. The current−voltage (I−V) measurement results showed that the electrical conductivity of the films increased with increasing nitrogen content.
Key words: fluorinated diamond-like carbon films; nitrogen doping; structure; electrical properties
