中國有色金屬學(xué)報(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 13 No. 3 June 2003 |
thermal contact resistance at
metal rheologic interface
LI Xiao-qian（李曉謙）, ZHONG Jue（鐘 掘）
（College of Mechanical and Electrical Engineering,
Central South University, Changsha 410083, China）
Abstract:The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of thermal contact resistance through studying the microscale mechanism of heat transfer at the interface. The results show that electron has stronger quantum tunneling effect when the thickness of oxide film is smaller than de Broglie wavelength of electron and the heat conduction of oxide film produces microscale effect. The thickness and nature of oxide film dominate the heat transfer at the metal rheologic interface. The main means to design the interface contact conductance are to control the formation of oxide film as well as the process of machining of roller surface and lubrication of interface.
Key words: free electron; phonon; rheologic interface; thermal contact resistance; oxide film
