中國(guó)有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 13 No. 1 February 2003 |
HE Li-ping(何利萍)2, CHEN Yan-lin(陳艷林)1
（1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070, China;
2. Department of Manufacturing Engineering and Engineering Management,
Faculty of Science andEngineering,City University of Hong Kong, Hong Kong）
Abstract:Ti3SiC2 materials have been fabricated by spark plasma sintering of the elemental powders with the addition of Al. At the heating rate of 80℃/min and under the pressure of 30MPa, the ideal synthesis temperature of Ti3SiC2 is in the range of 1150-1250℃. The addition of Al is in favor of the formation of Ti3SiC2. The synthesized compound has the molecular of Ti3Si0.8Al0.2C2 and lattice parameters of a=0.3069nm, c=1.7670nm. Its grain is plane-shape with a size of about 50μm in the elongated dimension. The prepared material has Vickers hardness of 3.5-5.5GPa(at 1N and 15s) and is as readily machinable as graphite’s.
Key words: Ti3SiC2; synthesis; spark plasma sintering
