中國有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 15 No. 2 April 2005 |
XING Xiao-dong(邢小東)1, YAO Jiang-hong(姚江宏)1,
WANG Z
（1. Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300457, China;
2. Key Laboratory for Semiconductor Materials Science,
Chinese Academy of Sciences, Beijing 100083, China）
Abstract: Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77K) of more than 1.50×105cm2/(V•s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0K electron mobility as high as 1.78×106cm2/(V•s) is achieved, and the quantum Hall oscillation phenomena can be observed.
Key words: modulation doped GaAs; high electron mobility; quantum Hall oscillation
